MTB04N03E3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C889E3
Issued Date : 2013.02.20
Revised Date : 2013.02.26
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.4
62.5
Unit
°C/W
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
30
-
-
1
2.2
3
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
-
-
±100
nA
VGS=±20, VDS=0V
IDSS
-
-
*RDS(ON)
-
-
*GFS
-
Dynamic
*Qg(VGS=10V) -
*Qg(VGS=5V)
-
*Qgs
-
*Qgd
-
-
-
1
25
μA
VDS =30V, VGS =0V
VDS =30V, VGS =0V, Tj=125°C
3.8
5
mΩ ^{VGS =10V, ID=30A}
6.1
8
VGS =4.5V, ID=24A
39
-
S
VDS =5V, ID=20A
50
-
31
10
-
-
nC
VDS=15V, ID=30A,VGS=10V
18
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
12
10
43
13
2466
432
298
-
-
0.96
35
28
-
-
-
ns
VDS=15V, ID=25A, VGS=10V,
RGS=2.7Ω
-
-
-
pF
VGS=0V, VDS=25V, f=1MHz
-
115
A
460
1.2
V IF=75A, VGS=0V
-
-
ns
nC
IF=30A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
Package
Shipping
MTB04N03E3-0-UB-S
TO-220
(Pb-free lead plating and RoHS compliant package)
50 pcs/tube, 20 tubes/box,
4 boxes / carton
MTB04N03E3
CYStek Product Specification