ES239 Datasheet, PDF (6/36 Pages) Cyrustek corporation – 6000 Counts DMM / Inrush

Absolute Maximum Ratings
Characteristic
Supply Voltage (V- to AGND)
Analog Input Voltage
V+
AGND/DGND
Digital Input
Power Dissipation. Flat Package
Operating Temperature
Storage Temperature
ES239
6000 Counts DMM / Inrush
Rating
-4V
V- -0.6 to V+ +0.6
V+ ≥ (AGND/DGND+0.5V)
AGND/DGND ≥ (V- -0.5V)
V- -0.6 to DGND +0.6
500mW
-20℃ to 70℃
-45℃ to 125℃
Electrical Characteristics
Parameter
Symbol
Test Condition
Power supply
Operating supply current In
DCV mode
Voltage roll-over error
V-
I_DD
I_SS
REV
Normal operation
In sleep mode
10MΩ input resistor
Voltage nonlinearity
NLV
Best case straight line
CIL=MPR capacitor
Zero input reading
10MΩ input resistor
Band-gap reference voltage
V_REF
100KΩ resistor between
VRH and AGND
Open circuit voltage for 600Ω
measurement
Open circuit voltage for other Ω
measurement
V-=3V
Peak to peak backplane voltage
Internal pull-high to 0V current
-3.5V≤ V ≤-2.2V
Between V- pin and
HOLD, RANGE, KEY,
FC1-FC5, BKLIT,
Between V- pin
and RS232
AC frequency response at
6.000V range
3dB frequency for LPF mode
Multi-level low battery detector
Reference voltage temperature
coefficient
V_t1
V_t2
TC_RF
±1%
±5%(No compensated)
F_3dB = 1kHz
F_3dB = Full
LBAT9 vs. V-
-20℃<T_A<70℃
Min.
2.4
—
—
—
—
-000
-1.30
—
-1.19
3.0
—
—
—
—
—
100k
—
—
—
Typ.
-3.0
1.8
5
—
—
000
-1.23
-3.0
-1.08
3.1
1.2
11
40-400
400-2000
1k
—
2.15
1.82
100
Max
3.3
2.5
10
±0.1
±0.1
+000
-1.16
—
-0.97
3.2
—
—
—
—
—
—
—
—
—
Units
V
mA
µA
%F.S¹
%F.S¹
counts
V
V
V
V
µA
µA
HZ
kHz
kHz
V
ppm/℃
Inrush integration time
TINRUSH 4MHz crystal oscillator —
100
—
ms
Capacitance measurement
accuracy
6.0nF – 60mF
-2.5²
—
2.5²
%
-3
—
3 counts
Note:
1. Full Scale.
2. When capacitance measurement (Clamp mode) is selected, the additional error 1% should be increased.
V 2.2
6
2015/12/15