IBIS4-1300 Datasheet, PDF (6/37 Pages) Cypress Semiconductor – 1.3 MPxl Rolling Shutter CMOS Image Sensor

IBIS4-1300
Table 1. optical & electrical characteristics
Pixel characteristics
Frame rate with analog output
Up to 23 full frames per second (see table1.1)
Table 1.1: In this table you find achievable values using the analog output
X pixelsY pixels X Freq
#
#
Hz
1286 1030 1,00E+07
1286 1030 2,00E+07
1286 1030 3,00E+07
1286 1030 3,75E+07
1286 512 3,75E+07
X Clock
sec
1,00E-07
5,00E-08
3,33E-08
2,67E-08
2,67E-08
X Blanking line time frame time frame rate pixel rate pixel rate freq
sec
sec
sec
per sec
sec
Hz
6,25E-06 0,000134850 0,138895500 7,20 1,049E-07 9536522
6,25E-06 0,000070550 0,072666500 13,76 5,486E-08 18228207
6,25E-06 0,000049117 0,050590167 19,77 3,819E-08 26182559
6,25E-06 0,000040543 0,041759633 23,95 3,153E-08 31719148
6,25E-06 0,000040543 0,020758187 48,17 3,153E-08 31719148
Note 1. The pixel rate can be boosted to 37.5 MHz. This requires a few measures.
• increase the analog bandwidth by halving the resistor on pin Nbias_oamp
• increase the ADC speed by the resistors related to the ADC speed (nbiasana1, nbiasana2, pbiasencload)
• experimentally fine tune the relative occurrence of the ADC clock relative to the X-pixel clock.
Note 2. The pure digital scan speed in X and Y direction is roughly 50 MHz. This is the maximum speed for skipping rows and
columns.
Light sensitivity & detection
Spectral sensitivity range
400 - 1000 nm
Spectral response * fill factor
0.165 A/W @ 700 nm
Quantum efficiency * fill factor
> 30% between 500 & 700 nm
Fill factor
Charge-to-voltage conversion gain
60%
20 µV/e^-
Output signal amplitude
1.2 V
Full well charge [electrons]
IBIS4-1300: about 90000 saturation, 50000 linear range
Noise equivalent flux at focal plane (700 nm)
1.1e-4 lx*s (at focal plane)
6.3 e-7 s.W/m2
Sensitivity
7 V/lx.s
1260 V.m2/W.s
MTF @ Nyquist frequency
Optical cross talk
0.4-0.5 @ 450 nm
0.25-0.35 @ 650 nm
10% to 1^st neighbor
2% to 2^nd neighbor
Image quality
Temporal noise (dark, short integration time)
20 noise electrons = 50 peak noise photons (*) 400 µV RMS
Dynamic range
(analog output, before ADC conversion)
Dark current
2750:1
69 dB
344 pA/cm² @ 21ºC
19 mV/s
1055 electrons/s
Dark current non-uniformity
Typically 15% RMS of dark current level.
Fixed pattern noise
(dark, short integration time)
9.6 mV peak-to-peak
1-2 mV RMS
Photo-response non-uniformity (PRNU)
10% peak-to-peak @ ½ of saturation signal
Document Number: 38-05707 Rev. *B
Page 6 of 37
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