IBIS4-1300 Datasheet, PDF (31/37 Pages) Cypress Semiconductor – 1.3 MPxl Rolling Shutter CMOS Image Sensor

IBIS4-1300
No.
62
63
64
65
66
67
68
69
70
71
72
73
Name
clk_adc
tri_adc
pbiasdig1
pbiasencload
pbiasdig2
nonlinear
n.c.
nbiasana2
nbiasana
vlow_adc
gnd_an
in_adc
74
vdd_an
75
gnd_dig
76
vdd_dig
77
vdd
78
gnd
79
vdd_resetr
80
L/R\
81
Pixel diode
82
Photodiode
83
clip
84
subsmpl
Type I/O
D
I
D
I
A
I
A
I
A
I
D
I
A
I
A
I
A
I
A
G
A
I
A
P
D
G
D
P
A
P
A
G
A
P
D
I
A
O
A
O
A
I
D
I
Description
Signal
ADC Clock
Converts on falling edge
ADC output tristate control
1=tristate; 0=output
100K to GND and decouple to VDD current bias for comparator after encoder
100K to GND and decouple to VDD current bias for encoder
100K to GND and decouple to VDD current bias for digital logic in columns
high active (1 = non-linear conversion) control for non-linear behavior of sensor
not connected
100K to VDD and decouple to GND bias current 2nd comparator stage
100K to VDD and decouple to GND bias current 1st comparator stage
+ 2 V DC, +-2 K between P71 and P61 Low ADC reference voltage
ADC ground of analog circuits
Converts between vlow and vhigh
(2-4V)
ADC input
+ 5 V DC
ADC analog power supply
ADC ground of digital circuits
+ 5 V DC
ADC digital power supply
+ 5 V DC
5 V DC default
(5.5 for large signal swing)
1=left; 0=right
groups current of 24 x 18 pixels
168x126 um2 (eq. 24 x 18 pixels)
Clips if output > 'clip' - Vth (PMOS)
high active, 1 = subsampling
Power supply for reset by right (readout)
shift register
Selects left or right shift register for 'select'
and 'reset'
Test structure for spectral response
measurement of pixels
Test structure for spectral response
measurement of photodiode
Clipping voltage for output amplifier
Selects viewfinder mode (1:4 = 320 x 256)
Bonding pad geometry for the IBIS4-1300
• The 84 pins are distributed evenly around the perimeter of
the Chip. At each edge there are 21 pins. Pin 1 is (in this
drawing) in the middle of the left edge.
• The opening in the bonding pads (the useful area for
bonding) is 200 x 150 um.
• The centers of the bonding pads are at all four edges at 150
um distance from the nominal chip border.
• The scribe line (=the spacing between the nominal borders
of neighboring chips) is 250 um.
• The bonding pad pitch is 437 um in X-direction
• The bonding pad pitch in Y-direction is 393 um
Document Number: 38-05707 Rev. *B
Page 31 of 37
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