STAR1000_09 Datasheet, PDF (3/21 Pages) Cypress Semiconductor – 1M Pixel Radiation Hard CMOS Image Sensor

STAR1000
Table 2. Electro-optical Specifications of the STAR1000 Sensor (continued)
Parameter
Average dark current at
293K
Value
Typical Value
223
Unit
ρA/cm²
Comment
Dark current signal
3135
e-/s
Dark current rises 425 e-/s per Krad.
DSNU signal
1.055% of Vsat
DSNU rises 14 e-/s per Krad.
Optical cross-talk
at 600 nm
Vertical: 16%
Horizontal: 17.5%
Anti-blooming capacity
x 1000
Output amplifier gain
x1, x2.47, x4.59 and x8.64
Controlled by 2 bits.
Analogue input
bandwidth
9.5
MHz
Analogue input signal
0.1 to 4.9
V
range
Analog-to-Digital
converter
10
bit
Radiation-tolerant version of the ADC on Ibis4 and
other image sensors.
ADC Differential
<= ±3.5
LSB
Non-Linearity (DNL)
ADC Integral
Non-Linearity (INL)
<= ±5.8
LSB
Integral non-linearity of ADC is better than linearity
of image sensor.
Supply voltage
5
V
Digital input signals are 3.3V compatible.
Power dissipation
<350
<100
mW
With internal ADC powered.
Without internal ADC powered.
Both values measured at nominal speed (12 MHz).
Document Number: 38-05714 Rev. *C
Page 3 of 21
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