STAR1000_09 Datasheet, PDF (1/21 Pages) Cypress Semiconductor – 1M Pixel Radiation Hard CMOS Image Sensor

STAR1000
1M Pixel Radiation Hard CMOS Image
Sensor
Features
The STAR1000 sensor has the following characteristics:
■ Integrating 3-transistor Active Pixel Sensor.
■ 1024 by 1024 pixels on 15 mm pitch.
■ Radiation tolerant design.
■ On-chip double sampling circuit to cancel Fixed Pattern Noise.
■ Electronic shutter.
■ Read out rate: up to 11 full frames per second.
■ Region of Interest (ROI) windowing.
■ On-chip 10-bit ADC.
■ Programmable gain amplifier.
■ Ceramic JLCC-84 package.
■ Available with BK7G18 glass and with N2 filled cavity
Sensor Description
The STAR1000 is a CMOS image sensor with 1024 by 1024
pixels on a 15 mm pitch. It features on-chip Fixed Pattern Noise
(FPN) correction, a programmable gain amplifier, and a 10-bit
Analog-to-Digital Converter (ADC).
All circuits are designed using the radiation tolerant design rules
for CMOS image sensors, to allow a high tolerance against total
dose effects.
Registers that are directly accessed by the external controller
contain the X- and Y- addresses of the pixels to be read. This
architecture provides flexible operation and allows different
operation modes such as (multiple) windowing, subsampling,
etc.
Three versions of sensors are available: STAR1000,
STAR1000BK7, and STAR1000SP. The STAR1000 has a quartz
glass lid, and the cavity between the die and the glass lid is filled
with air. The STAR1000BK7 has a BK7G18 glass lid, and the
cavity is filled with N₂ which increases the temperature operating
range. The STAR1000SP is similar to the STAR1000BK7, it has
a BK7G18 glass lid, and a N₂ filled cavity, but is also screened
and tested to space qualified device standards.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 38-05714 Rev. *C
• San Jose, CA 95134-1709 • 408-943-2600
Revised July 20, 2009
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