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CG5982AF Datasheet, PDF (3/12 Pages) Cypress Semiconductor – 2K x 8 Automotive Dual-port Static RAM
CG5982AF
Electrical Characteristics Over the Operating Range[4] (continued)
Parameter
Description
ICC
VCC Operating Supply Current
ISB1
Standby Current Both Ports,
TTL Inputs
ISB2
Standby Current One Port,
TTL Inputs
ISB3
Standby Current Both Ports,
CMOS Inputs
ISB4
Standby Current One Port,
CMOS Inputs
Capacitance[8]
Test Conditions
Cf =Ef=MAVXIL[7,] Outputs Open,
Cf =ELfMaAnXd[7C] ER > VIH,
OCEutLpourtsCOERpe>nV, IfH=, AfMctAivXe[7P] ort
Both Ports CEL and CER >
VCC – 0.2V, VIN > VCC – 0.2V
or VIN < 0.2V, f = 0
One Port CEL or CER > VCC
– 0.2V, VIN > VCC – 0.2V or
VIN < 0.2V, Active
Outputs Open, f =
Port
fMAX[7]
Auto
Auto
Auto
Auto
Auto
CG5982AF
Min.
Max.
120
45
90
15
85
Unit
mA
mA
mA
mA
mA
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Max.
Unit
15
pF
10
pF
AC Test Loads and Waveforms
5V
OUTPUT
R1 893Ω
30 pF
Including
Jig and
Scope
(a)
R2
347Ω
5V
OUTPUT
R1 893Ω
5 pF
Including
Jig and
Scope
(b)
R2
347Ω
Equivalent to:
THÉVENIN EQUIVALENT
250Ω
OUTPUT
1.4V
3.0V
GND
10%
< 5 ns
5V
BUSY
OR
INT
281Ω
30 pF
BUSY Output Load
(CY7C132/CY7C136 Only)
All input pulses
90%
90%
10%
< 5 ns
Switching Characteristics Over the Operating Range[4, 9]
CG5982AF
Parameter
Description
Min. Max. Unit
Read Cycle
tRC
Read Cycle Time
tAA
Address to Data Valid[10]
55
ns
55
ns
tOHA
tACE
tDOE
tLZOE
Data Hold from Address Change
CE LOW to Data Valid[10]
OE LOW to Data Valid[10]
OE LOW to Low-Z[8, 11]
0
ns
55
ns
25
ns
3
ns
Notes:
7. At f = fMAX, address and data inputs are cycling at the maximum frequency of read cycle of 1/trc and using AC Test Waveforms input levels of GND to 3V.
8. This parameter is guaranteed but not tested.
9. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, output loading of the specified
IOL/IOH, and 30-pF load capacitance.
10. AC test conditions use VOH = 1.6V and VOL = 1.4V.
11. At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE.
Document #: 38-06067 Rev. *C
Page 3 of 12
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