MB39C831 Datasheet, PDF (27/40 Pages) Cypress Semiconductor – Ultra Low Voltage Boost Power Management IC for Solar/Thermal Energy Harvesting Datasheet

Figure 10-3 Typical Characteristics of Charge Mode (MPPT_ENA = H, ENA = H)
VOUT pin current
vs Preset output voltages
60
VDD = 0.6V, Ta = 25^oC
MPPT_ENA = H, ENA = H
50
40
30
20
10
0
3.0V
3.3V 3.6V 4.1V 4.5V 5.0V
Preset output voltages
Data831024
VOUT pin current
vs VOUT
6.0
VDD = 0V, Ta = 25^oC
MPPT_ENA = H, ENA = H
5.0
4.0
3.0
2.0
1.0
0
3.0
3.5
4.0
4.5
5.0
5.5
VOUT [V]
Data831025
MB39C831
Figure 10-4 Waveforms of VDD Pin Voltage in Charge Mode (MPPT_ENA = H, ENA = H)
Waveforms : Charge mode (MPPT mode)
VDD = 0.6V, C5/C6 = 3.3nF/4.7nF, C7/C8 = 100nF/47nF
VDD
200mV/DIV
MPPT setting = 50%, MPPT setting voltage = 0.6V × 50%
in applying 3.3V to VOUT
Measurement of release voltage
600
300
0
Period of 1 cycle
1s/DIV
Wave831005
Waveforms : Charge mode (MPPT mode)
VDD = 0.6V, C5/C6 = 10nF/4.7nF, C7/C8 = 100nF/220nF
VDD
200mV/DIV
MPPT setting = 50%, MPPT setting voltage = 0.6V × 50%
in applying 3.3V to VOUT
Measurement of release voltage
600
300
0
Period of 1 cycle
1s/DIV
Wave831006
Document Number: 002-08404 Rev *A
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