CY8C21345AUTO Datasheet, PDF (20/36 Pages) Cypress Semiconductor – Automotive PSoC® Programmable System-on-Chip™

CY8C21345, CY8C21645
CY8C22345, CY8C22345H, CY8C22645
DC Programming Specifications
Table 15 lists the guaranteed maximum and minimum specifications for automotive A-grade and E-grade devices. Unless otherwise
noted, all specifications in the table apply to A-grade devices for the voltage and temperature ranges of: 4.75 V to 5.25 V and –40 °C
to 85 °C, or 3.0 V to 3.6 V and –40 °C to 85 °C. Unless otherwise noted, all specifications in the table also apply to E-grade devices
for the voltage and temperature ranges of: 4.75 V to 5.25 V and –40 °C to 125 °C. Typical parameters apply to 5 V and 3.3 V at 25 °C,
unless specified otherwise, and are for design guidance only.
Table 15. DC Programming Specifications
Symbol
Description
Min Typ
V_DDIWRITE Supply voltage for flash write operations
3.0
–
I_DDP
Supply current during programming or verify
–
5
V_ILP
Input low voltage during programming or verify
–
–
V_IHP
Input high voltage during programming or verify 2.2
–
I_ILP
Input current when applying V_ILP to P1[0] or
–
–
P1[1] during programming or verify
I_IHP
Input current when applying V_IHP to P1[0] or
–
–
P1[1] during programming or verify
V_OLV
Output low voltage during programming or
verify
–
–
V_OHV
Flash_ENPB
Flash_ENT
Flash_DR
Output high voltage during programming or
verify
Flash endurance (per block)^{[8, 9]}
A-grade devices
E-grade devices
Flash endurance (total)^{[9, 10]}
CY8C21x45 A-grade devices
CY8C22x45 A-grade devices
CY8C21x45 E-grade devices
CY8C22x45 E-grade devices
Flash data retention^[9]
A-grade devices
E-grade devices
V_DD – 1.0 –
1,000
–
100
–
128,000 –
256,000 –
12,800 –
25,600 –
10
–
10
–
Max Units
Notes
–
V
25
mA
0.8
V
–
V
0.2
mA Driving internal pull-down
resistor
1.5
mA Driving internal pull-down
resistor
0.75
V
V_DD
V
Erase/write cycles per block
–
–
–
–
Erase/write cycles
–
–
–
–
–
–
–
–
–
Years
–
Years
Notes
8. The erase/write cycle limit per block (Flash_ENPB) is only guaranteed if the device operates within one voltage range. Voltage ranges are 3.0 V to 3.6 V and 4.75 V to
5.25 V.
9. For the full temperature range, the user must employ a temperature sensor user module (FlashTemp) or other temperature sensor and feed the result to the temperature
argument before writing. Refer to the Flash APIs Application Note AN2015 for more information.
10. The maximum total number of allowed erase/write cycles is the minimum Flash_ENPB value multiplied by the number of flash blocks in the device.
Document Number: 001-55397 Rev. *I
Page 20 of 36
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