CAT28F102 Datasheet, PDF (7/14 Pages) Catalyst Semiconductor – 1 Megabit CMOS Flash Memory

FUNCTION TABLE⁽¹⁾
Mode
CE
Read
V_IL
Output Disable
V_IL
Standby
V_IH
Signature (MFG)
V_IL
Signature (Device)
V_IL
Program/Erase
V_IL
Write Cycle
V_IL
Read Cycle
V_IL
Output Disable
V_IL
Standby
V_IH
CAT28F102
Pins
OE
WE
VPP
I/O
Notes
V_IL
V_IH
V_PPL
D_OUT
V_IH
V_IH
X
High-Z
X
X
V_PPL
High-Z
V_IL
V_IH
V_PPL
0031H
A₀ = V_IL, A₉ = 12V
V_IL
V_IH
X
0051H
A₀ = V_IH, A₉ = 12V
V_IH
V_IL
V_PPH
D_IN
See Command Table
V_IH
V_IL
V_PPH
D_IN
During Write Cycle
V_IL
V_IH
V_PPH
D_OUT
During Write Cycle
V_IH
V_IH
V_PPH
High-Z
During Write Cycle
X
X
V_PPH
High-Z
During Write Cycle
WRITE COMMAND TABLE
Commands are written into the command register in one or two write cycles. The command register can be altered
only when V_PP is high and the instruction byte is latched on the rising edge of WE. Write cycles also internally latch
addresses and data required for programming and erase operations.
Mode
Set Read
First Bus Cycle
Operation Address
Write
X
DIN
XX00H
Pins
Operation
Read
Second Bus Cycle
Address
DIN
AIN
DOUT
DOUT
Read Sig. (MFG)
Write
X
XX90H
Read
0000
0031H
Read Sig. (Device)
Write
X
XX90H
Read
0001
0051H
Erase
Write
X
XX20H
Write
X
XX20H
Erase Verify
Write
AIN
XXA0H
Read
X
DOUT
Program
Write
X
XX40H
Write
AIN
DIN
Program Verify
Write
X
XXC0H Read
X
DOUT
Reset
Write
X
XXFFH
Write
X
XXFFH
Note:
(1) Logic Levels: X = Logic ‘Do not care’ (V_IH, V_IL, V_PPL, V_PPH)
7
Doc. No. 25038-0A 2/98 F-1