CAT28F102 Datasheet, PDF (1/14 Pages) Catalyst Semiconductor – 1 Megabit CMOS Flash Memory

CAT28F102
1 Megabit CMOS Flash Memory
Licensed Intel
second source
FEATURES
s Fast Read Access Time: 45/55/70/90 ns
s Low Power CMOS Dissipation:
–Active: 30 mA max (CMOS/TTL levels)
–Standby: 1 mA max (TTL levels)
–Standby: 100 µA max (CMOS levels)
s High Speed Programming:
–10 µs per byte
–1 Sec Typ Chip Program
s 0.5 Seconds Typical Chip-Erase
s 12.0V ± 5% Programming and Erase Voltage
s Commercial,Industrial and Automotive
Temperature Ranges
DESCRIPTION
The CAT28F102 is a high speed 64K x 16-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and E²PROM devices. Programming and Erase
are performed through an operation and verify algo-
rithm. The instructions are input via the I/O bus, using a
BLOCK DIAGRAM
s 64K x 16 Word Organization
s Stop Timer for Program/Erase
s On-Chip Address and Data Latches
s JEDEC Standard Pinouts:
–40-pin DIP
–44-pin PLCC
–40-pin TSOP
s 100,000 Program/Erase Cycles
s 10 Year Data Retention
s Electronic Signature
two write cycle scheme. Address and Data are latched
to free the I/O bus and address bus during the write
operation.
The CAT28F102 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed to
endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 40-pin DIP, 44-pin PLCC, or 40-pin TSOP
packages.
I/O0–I/O15
ERASE VOLTAGE
SWITCH
I/O BUFFERS
WE
COMMAND
REGISTER
CE
OE
A0–A15
VOLTAGE VERIFY
SWITCH
© 1998 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
PROGRAM VOLTAGE
SWITCH
CE, OE LOGIC
DATA SENSE
LATCH AMP
Y-DECODER
X-DECODER
1
Y-GATING
1,048,576-BIT
MEMORY
ARRAY
28F101-1
Doc. No. 25038-0A 2/98 F-1