English
Language : 

CAT28C65B_05 Datasheet, PDF (6/13 Pages) Catalyst Semiconductor – 64K-Bit CMOS PARALLEL EEPROM
CAT28C65B
A.C. CHARACTERISTICS, Write Cycle
VCC = 5V ±10%, unless otherwise specified.
Symbol
tWC
tAS
tAH
tCS
tCH
tCW(2)
tOES
tOEH
tWP(2)
tRB
tDS
tDH
tINIT(1)
tBLC(1)(3)
Parameter
Write Cycle Time
Address Setup Time
Address Hold Time
CE Setup Time
CE Hold Time
CE Pulse Time
OE Setup Time
OE Hold Time
OE Pulse Width
WE Low to RDY/BUSY Low
Data Setup Time
Data Hold Time
Write Inhibit Period After Power-up
Byte Load Cycle Time
28C65B-90
Min. Max.
5
0
100
0
0
110
0
0
110
120
60
0
5
10
.05 100
28C65B-12
Min. Max.
5
0
100
0
0
110
0
0
110
120
60
0
5
10
.05 100
28C65B-15
Min. Max.
5
0
100
0
0
110
0
0
110
120
60
0
5
10
.05 100
Units
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
µs
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) A write pulse of less than 20ns duration will not initiate a write cycle.
(3) A timer of duration tBLC max. begins with every LOW to HIGH transition of WE. If allowed to time out, a page or byte write will begin;
however a transition from HIGH to LOW within tBLC max. stops the timer.
Doc. No. 1009, Rev. E
6