CAT28C65B_05 Datasheet, PDF (1/13 Pages) Catalyst Semiconductor – 64K-Bit CMOS PARALLEL EEPROM

CAT28C65B
CAT28C65B
64K-Bit CMOS PARALLEL EEPROM
FEATURES
I Fast read access times:
– 90/120/150ns
I Low power CMOS dissipation:
– Active: 25 mA max.
– Standby: 100 µA max.
I Simple write operation:
– On-chip address and data latches
– Self-timed write cycle with auto-clear
I Fast write cycle time:
– 5ms max
I CMOS and TTL compatible I/O
I Hardware and software write protection
ALOGEN ^FR
LEA _{D F REETM}
I Commercial, industrial and automotive
temperature ranges
I Automatic page write operation:
– 1 to 32 bytes in 5ms
– Page load timer
I End of write detection:
– Toggle bit
– DATA polling
– RDY/BUSY
I 100,000 program/erase cycles
I 100 year data retention
DESCRIPTION
The CAT28C65B is a fast, low power, 5V-only CMOS
parallel EEPROM organized as 8K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V_CC power up/down write protection
eliminate additional timing and protection hardware.
DATA Polling, a RDY/BUSY pin and Toggle status bits
signal the start and end of the self-timed write cycle.
Additionally, the CAT28C65B features hardware and
software write protection.
The CAT28C65B is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC-
approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-
pin PLCC packages.
BLOCK DIAGRAM
A5–A12
ADDR. BUFFER
& LATCHES
VCC
CE
OE
WE
INADVERTENT
WRITE
PROTECTION
CONTROL
LOGIC
A0–A4
RDY/BUSY
TIMER
ADDR. BUFFER
& LATCHES
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
ROW
DECODER
HIGH VOLTAGE
GENERATOR
DATA POLLING,
TOGGLE BIT &
RDY/BUSY LOGIC
COLUMN
DECODER
1
8,192 x 8
EEPROM
ARRAY
32 BYTE PAGE
REGISTER
I/O BUFFERS
I/O0–I/O7
DDoocc.. NNoo.. 11000099,, RReevv.. EE