CAT28C65B_05 Datasheet, PDF (5/13 Pages) Catalyst Semiconductor – 64K-Bit CMOS PARALLEL EEPROM

A.C. CHARACTERISTICS, Read Cycle
V_CC = 5V ±10%, unless otherwise specified.
Symbol
t_RC
t_CE
t_AA
t_OE
t_LZ(1)
t_OLZ(1)
t_HZ(1)(2)
t_OHZ(1)(2)
t_OH(1)
Parameter
Read Cycle Time
CE Access Time
Address Access Time
OE Access Time
CE Low to Active Output
OE Low to Active Output
CE High to High-Z Output
OE High to High-Z Output
Output Hold from Address Change
CAT28C65B
28C65B-90
Min. Max.
90
90
90
50
0
0
50
50
0
28C65B-12
Min. Max.
120
120
120
60
0
0
50
50
0
28C65B-15
Min. Max. Units
150
ns
150 ns
150 ns
70 ns
0
ns
0
ns
50 ns
50 ns
0
ns
Figure 1. A.C. Testing Input/Output Waveform(3)
2.4 V
0.45 V
INPUT PULSE LEVELS
2.0 V
0.8 V
REFERENCE POINTS
Figure 2. A.C. Testing Load Circuit (example)
1.3V
1N914
DEVICE
UNDER
TEST
3.3K
OUT
CL = 100 pF
CL INCLUDES JIG CAPACITANCE
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
(3) Input rise and fall times (10% and 90%) < 10 ns.
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Doc. No. 1009, Rev. E