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CAT25C01_05 Datasheet, PDF (3/15 Pages) Catalyst Semiconductor – 1K/2K/4K SPI Serial CMOS EEPROM
CAT25C01, CAT25C02, CAT25C04
A.C. CHARACTERISTICS
SYMBOL PARAMETER
CAT25CXX-1.8
CAT25CXX
1.8V-5.5V 2.5V-5.5V
4.5V-5.5V
Min. Max. Min. Max. Min. Max.
Test
UNITS Conditions
tSU
Data Setup Time
50
20
20
ns
tH
Data Hold Time
50
20
20
ns
tWH
SCK High Time
250
75
40
tWL
SCK Low Time
250
75
40
fSCK
Clock Frequency
DC
1 DC
5 DC
tLZ
HOLD to Output Low Z
50
50
tRI(1)
Input Rise Time
2
2
tFI(1)
Input Fall Time
2
2
tHD
HOLD Setup Time
100
40
40
tCD
tWC(4)
tV
d tHO
tDIS
e tHZ
u tCS
tCSS
tin tCSH
tWPS
tWPH
HOLD Hold Time
100
Write Cycle Time
Output Valid from Clock Low
Output Hold Time
0
Output Disable Time
HOLD to Output High Z
CS High Time
500
CS Setup Time
500
CS Hold Time
500
WP Setup Time
150
WP Hold Time
150
40
5
250
0
250
150
100
100
100
50
50
40
5
75
0
75
50
100
100
100
50
50
n Power-Up Timing(1)(3)
o Symbol
c tPUR
tPUW
Parameter
Power-up to Read Operation
Power-up to Write Operation
Max.
1
1
is NOTE:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) AC Test Conditions:
DInput Pulse Voltages: 0.3VCC to 0.7VCC
Input rise and fall times: ≤10ns
ns
ns
10 MHz
ts 50
ns
2
µs
r 2
µs
ans
Pns
5
ms
CL = 50pF
40
ns
(note 2)
ns
75
ns
50
ns
ns
ns
ns
ns
ns
Units
ms
ms
Input and output reference voltages: 0.5VCC
Output load: current source IOL max/IOH max; CL=50pF
(3) tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
(4) tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
3
Doc. No. 1105, Rev. B