AT-32032 Datasheet, PDF (8/14 Pages) AVAGO TECHNOLOGIES LIMITED – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32032 Typical Scattering Parameters, Common Emitter, Z_O = 50 Ω, V_CE = 5 V, I_C = 2 mA
Freq.
S₁₁
GHz
Mag
Ang
dB
S₂₁
Mag
Ang
dB
S₁₂
Mag
Ang
0.1
0.940
-13
17.5
7.500
167
-36.0
0.016
83
0.5
0.732
-56
14.9
5.588
129
-23.8
0.064
60
0.9
0.518
-87
12.4
4.165
104
-21.1
0.088
51
1.0
0.484
-93
11.6
3.814
99
-20.6
0.093
50
1.5
0.342
-124
9.0
2.824
78
-19.0
0.112
49
1.8
0.291
-142
7.8
2.466
67
-18.1
0.125
49
2.0
0.265
-153
7.1
2.267
61
-17.5
0.134
50
3.0
0.212
151
4.5
1.670
34
-14.0
0.199
50
4.0
0.238
103
2.7
1.367
11
-10.7
0.293
43
5.0
0.306
70
1.5
1.186
-8
-7.6
0.416
30
6.0
0.383
50
0.6
1.067
-26
-5.2
0.550
13
7.0
0.456
34
-0.1
0.990
-43
-3.3
0.682
-8
8.0
0.523
19
-0.7
0.918
-59
-2.3
0.771
-31
9.0
0.573
2
-1.3
0.857
-75
-1.9
0.805
-53
10.0
0.620
--14
-2.0
0.792
-90
-2.0
0.791
-73
S₂₂
Mag
Ang
0.981
-5
0.842
-22
0.714
-29
0.699
-30
0.632
-36
0.606
-40
0.596
-43
0.566
-58
0.549
-77
0.515
-102
0.453
-134
0.375
-177
0.373
130
0.437
86
0.515
54
AT-32032 Typical Noise Parameters,
Common Emitter, Z_O = 50 Ω, V_CE = 5 V, I_C = 2 mA
Freq.
F_min
Γ_opt
R_n
GHz
dB
Mag
Ang
ohms
0.9
1.0
0.48
50
14.7
1.8
1.2
0.445
118
7.4
2.0
1.3
0.44
134
5.8
2.5
1.5
0.43
172
3.7
3.0
1.7
0.47
-154
5.0
3.5
1.9
0.53
-123
11.3
4.0
2.1
0.58
-98
23.7
G_assoc
dB
14.8
10.1
9.5
8.5
7.7
7.0
6.4
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
S₂₁
S₁₂
(k ± √k²â€“1)
MSG = |S₂₁| /|S₁₂|
k
=
1
– |S₁₁| ² – |S₂₂|²
2*|S₁₂| |S₂₁|
+
|D|²
;
D
=
S₁₁S₂₂
–
S₁₂
S₂₁
25
1.25
20
1
15
0.75
10
0.5
5
gmax
dB(S[2,1])
0
k
01
2
3
4
5
FREQUENCY (GHz)
0.25
0
6
Figure 13. Gain vs. Frequency at 5 V, 2 mA.
Note: dB(|S ₂₁|) = 20 * log(|S₂₁|)