AT-32032 Datasheet, PDF (4/14 Pages) AVAGO TECHNOLOGIES LIMITED – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32032 Typical Scattering Parameters, Common Emitter, Z_O = 50 Ω, V_CE = 1 V, I_C = 1 mA
Freq.
S₁₁
GHz
Mag
Ang
dB
S₂₁
Mag
Ang
dB
S₁₂
Mag
Ang
0.5
0.852
-51
9.61
3.024
137
-20.65 0.093
59
0.75
0.760
-74
8.68
2.717
119
-18.39 0.120
48
1.0
0.655
-94
7.68
2.420
104
-17.35 0.136
40
1.5
0.523
-130
5.75
1.939
79
-16.68 0.147
32
2.0
0.451
-161
4.11
1.606
60
-16.52 0.149
31
3.0
0.403
147
1.76
1.224
30
-14.42 0.190
43
4.0
0.419
104
0.20
1.023
7
-10.21 0.309
42
5.0
0.459
69
-0.92
0.899
-11
-6.58
0.469
26
6.0
0.497
45
-1.56
0.836
-26
-4.22
0.615
5
7.0
0.529
27
-1.84
0.809
-41
-2.85
0.720
-18
8.0
0.561
13
-2.07
0.788
-56
-2.33
0.765
-40
9.0
0.590
-2
-2.34
0.764
-72
-2.28
0.769
-60
10.0
0.626
-17
-2.74
0.729
-87
-2.57
0.744
-79
S₂₂
Mag
Ang
0.895
-21
0.821
-29
0.756
-35
0.665
-44
0.615
-52
0.565
-71
0.527
-96
0.478
-127
0.411
-168
0.379
141
0.425
96
0.495
63
0.555
38
AT-32032 Typical Noise Parameters,
Common Emitter, Z_O = 50 Ω, V_CE = 1 V, I_C = 1 mA
Freq.
F_min
Γ_opt
R_n
GHz
dB
Mag
Ang
ohms
0.9
1.1
0.48
63
14.5
1.8
1.3
0.51
129
6.8
2.0
1.4
0.52
143
5.2
2.5
1.6
0.54
177
2.9
3.0
1.8
0.57
-153
4.9
3.5
2.0
0.61
-125
12.7
4.0
2.2
0.65
-102
26.0
G_assoc
dB
11.5
8.3
7.4
6.4
5.7
5.0
4.2
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = ^S21 (k ± √k²â€“1)
S₁₂
MSG = |S₂₁| /|S₁₂|
k
=
1
– |S₁₁| ² – |S₂₂|²
2*|S₁₂| |S₂₁|
+
|D|²
;
D
=
S₁₁S₂₂
–
S₁₂
S₂₁
20
1.25
15
1
10
0.75
5
0.5
0
gmax
dB(S[2,1])
-5
k
01
2
3
4
5
FREQUENCY (GHz)
0.25
0
6
Figure 9. Gain vs. Frequency at 1 V, 1 mA.
Note: dB(|S ₂₁|) = 20 * log(|S₂₁|)