AT-32032 Datasheet, PDF (5/14 Pages) AVAGO TECHNOLOGIES LIMITED – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32032 Typical Scattering Parameters, Common Emitter, Z_O = 50 Ω, V_CE = 2.7 V, I_C = 2 mA
Freq.
S₁₁
GHz
Mag
Ang
dB
S₂₁
Mag
Ang
dB
S₁₂
Mag
Ang
0.5
0.744
-57
14.37
5.232
130
-23.72 0.065
60
0.75
0.609
-78
12.86
4.394
112
-21.73 0.082
52
1.0
0.489
-96
11.40
3.714
98
-20.58 0.094
49
1.5
0.351
-129
8.86
2.774
77
-19.05 0.112
48
2.0
0.280
-158
6.93
2.221
61
-17.56 0.133
49
3.0
0.236
149
4.28
1.636
34
-14.08 0.198
50
4.0
0.258
105
2.58
1.346
11
-10.62 0.295
44
5.0
0.317
72
1.36
1.170
-8
-7.54
0.420
30
6.0
0.387
51
0.43
1.051
-26
-5.11
0.555
13
7.0
0.455
34
-0.24
0.973
-42
-3.28
0.686
-8
8.0
0.516
19
-0.80
0.913
-58
-2.24
0.772
-30
9.0
0.563
3
-1.39
0.852
-74
-1.86
0.807
-52
10.0
0.610
-14
-2.00
0.794
-89
-2.00
0.795
-73
S₂₂
Mag
Ang
0.839
-22
0.755
-28
0.694
-31
0.625
-37
0.592
-43
0.561
-59
0.541
-78
0.510
-103
0.447
-135
0.373
-178
0.367
129
0.431
86
0.504
55
AT-32032 Typical Noise Parameters,
Common Emitter, Z_O = 50 Ω, V_CE = 2.7 V, I_C = 2 mA
Freq.
F_min
Γ_opt
R_n
GHz
dB
Mag
Ang
ohms
0.9
0.9
0.38
57
10.6
1.8
1.2
0.41
124
6.2
2.0
1.2
0.42
136
5.3
2.5
1.4
0.44
176
3.4
3.0
1.6
0.47
-152
4.9
3.5
1.8
0.52
-123
10.5
4.0
2.1
0.57
-100
20.6
G_assoc
dB
14.0
10.5
9.4
8.4
7.5
6.9
6.2
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = ^S21 (k ± √k²â€“1)
S₁₂
MSG = |S₂₁| /|S₁₂|
k
=
1
– |S₁₁| ² – |S₂₂|²
2*|S₁₂| |S₂₁|
+
|D|²
;
D
=
S₁₁S₂₂
–
S₁₂
S₂₁
20
1.25
16
1
12
0.75
8
0.5
4
gmax
dB(S[2,1])
0
k
01
2
3
4
5
FREQUENCY (GHz)
0.25
0
6
Figure 10. Gain vs. Frequency at 2.7 V, 2 mA.
Note: dB(|S ₂₁|) = 20 * log(|S₂₁|)