AT-32032 Datasheet, PDF (2/14 Pages) AVAGO TECHNOLOGIES LIMITED – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32032 Absolute Maximum Ratings
Symbol
V_EBO
V_CBO
V_CEO
I_C
P_T
T_j
T_STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation^{[2, 3]}
Junction Temperature
Storage Temperature
Absolute
Units
Maximum^[1]
V
1.5
V
11
V
5.5
mA
40
mW
200
°C
150
°C
-65 to 150
Thermal Resistance ^[2]:
q_jc = 350°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. T_{mounting surface} = 25°C.
3. Derate at 2.86 mW/°C for T_{mounting surface}
> 80°C.
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
NF
Noise Figure
V_CE = 2.7 V, I_C = 5 mA
f = 0.9 GHz
dB
f = 1.8 GHz
1.0
1.3
1.25
G_A
Associated Gain
V_CE = 2.7 V, I_C = 5 mA
f = 0.9 GHz
dB
f = 1.8 GHz
13.5
15.0
10.5
h_FE
Forward Current Transfer Ratio
V_CE = 2.7 V, I_C = 5 mA
–
70
300
I_CBO
Collector Cutoff Current
μA
0.2
V_CB = 3 V
I_EBO
Emitter Cutoff Current
μA
1.5
V_EB = 1 V
AT-32032 Characterization Information, T_A = 25°C
Symbol
Parameters and Test Conditions
Units
Typ.
P_1dB
Power at 1 dB Gain Compression (opt tuning)
f = 0.9 GHz
dBm
13
V_CE = 2.7 V, I_C = 20 mA
G_1dB
Gain at 1 dB Gain Compression (opt tuning)
f = 0.9 GHz
dB
15.5
V_CE = 2.7 V, I_C = 20 mA
IP₃
Output Third Order Intercept Point (opt tuning)
f = 0.9 GHz
dBm
23
V_CE = 2.7 V, I_C = 20 mA
|S₂₁|_E2
Gain in 50 Ω System
V_CE = 2.7 V, I_C = 2 mA
f = 0.9 GHz
dB
11.5