AT-32032 Datasheet, PDF (7/14 Pages) AVAGO TECHNOLOGIES LIMITED – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32032 Typical Scattering Parameters, Common Emitter, Z_O = 50 Ω, V_CE = 2.7 V, I_C = 10 mA
Freq.
S₁₁
GHz
Mag
Ang
dB
S₂₁
Mag
Ang
dB
S₁₂
Mag
Ang
0.5
0.292
-76.768 20.197 10.230 102.252 -26.558 0.047
68.475
0.75
0.194
-89.611 17.121 7.179
90.014 -23.688 0.065
68.467
1.0
0.139
-100.612 14.850 5.527
81.084 -21.463 0.085
67.769
1.5
0.081
-126.165 11.624 3.813
66.997 -18.160 0.124
64.256
2.0
0.057
-160.808 9.409
2.954
54.862 -15.735 0.163
59.458
3.0
0.064
131.034 6.523
2.119
33.080 -12.174 0.246
48.003
4.0
0.103
91.686 4.750
1.728
13.099 -9.551 0.333
35.089
5.0
0.169
69.993 3.580
1.510
-5.823 -7.424 0.425
21.009
6.0
0.258
58.339 2.719
1.368
-24.160 -5.668 0.521
5.600
7.0
0.362
46.145 2.042
1.265
-42.430 -4.173 0.619
-11.469
8.0
0.466
31.083 1.334
1.166
-60.668 -3.083 0.701
-30.211
9.0
0.553
13.235 0.533
1.063
-78.273 -2.402 0.758
-50.020
10.0
0.628
-5.840 -0.404 0.955
-95.268 -2.236 0.773
-69.960
S₂₂
Mag
0.577
0.528
0.504
0.481
0.467
0.443
0.418
0.378
0.309
0.224
0.217
0.307
0.419
Ang
-23.850
-24.315
-25.449
-30.013
-36.600
-52.023
-70.196
-92.177
-119.643
-160.597
138.234
91.480
58.813
AT-32032 Typical Noise Parameters,
Common Emitter, Z_O = 50 Ω, V_CE = 2.7 V, I_C = 10 mA
Freq.
F_min
Γ_opt
R_n
GHz
dB
Mag
Ang
ohms
0.9
1.1
0.15
87
7.6
1.8
1.3
0.23
159
5.6
2.0
1.4
0.26
173
5.3
2.5
1.5
0.32
-156
5.7
3.0
1.7
0.38
-128
8.6
3.5
1.9
0.45
-105
14.8
4.0
2.0
0.52
-84
25.0
G_assoc
dB
16.2
11.9
11.0
9.5
8.4
7.6
6.8
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = ^S21 (k ± √k²â€“1)
S₁₂
MSG = |S₂₁| /|S₁₂|
k
=
1
– |S₁₁| ² – |S₂₂|²
2*|S₁₂| |S₂₁|
+
|D|²
;
D
=
S₁₁S₂₂
–
S₁₂
S₂₁
25
1.25
20
1
15
0.75
10
0.5
5
gmax
dB(S[2,1])
0
k
01
2
3
4
5
FREQUENCY (GHz)
0.25
0
6
Figure 12. Gain vs. Frequency at 2.7 V, 10 mA.
Note: dB(|S ₂₁|) = 20 * log(|S₂₁|)