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DEMO-ATF-5X1M4E Datasheet, PDF (5/16 Pages) Broadcom Corporation. – Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-541M4 Typical Performance Curves, continued
30
45
25 C
25
-40 C
40
85 C
35
20
30
15
25
10
20
25 C
-40 C
85 C
5
15
0
01 2 3 4 5 67
FREQUENCY (GHz)
Figure 12. Gain vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA[1].
10
01 2 3 4 5 67
FREQUENCY (GHz)
Figure 13. OIP3 vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA[1].
2.0
25 C
-40 C
1.5
85 C
1.0
0.5
0
01 2 3 4 5 67
FREQUENCY (GHz)
Figure 14. NF vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA[1].
23
25 C
22
-40 C
85 C
21
20
19
18
17
01 2 3 4 5 67
FREQUENCY (GHz)
Figure 15. P1dB vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA[1].
ATF-541M4 Output Reflection Coefficient Parameters Tuned
for Maximum Output IP3[1]; VDS = 3V, IDS = 60 mA
Gamma[2]
Gamma[2]
OIP3
P1dB
Freq
Out_Mag.
Out_Mag.
(GHz)
(Mag)
(Degrees)
(dBm)
(dBm)
0.9
0.006
23
2.0
0.314 -167
3.9
0.321
134
5.8
0.027
89
35.04
35.82
36.60
37.62
19.47
21.36
20.37
19.38
Notes:
1. Input tuned for minimum NF and the output tuned for maximum
OIP3 using an InterContinental Microwave (ICM) test fixture, double
stub tuners and bias tees.
2. Gamma out is the reflection coefficient of the matching circuit pre‑
sented to the output of the device.