DEMO-ATF-5X1M4E Datasheet, PDF (3/16 Pages) Broadcom Corporation. – Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package

ATF-541M4 Electrical Specifications
T_A = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage Vds = 3V, Ids = 60 mA
V
0.4
0.58
0.75
Vth
Threshold Voltage Vds = 3V, Ids = 4 mA
V
0.18
0.36
0.52
Idss
Saturated Drain Current Vds = 3V, Vgs = 0V
µA
—
0.28
5
Gm
Transconductance Vds = 3V, gm = ∆Idss/∆Vgs; mmho
230
398
560
∆Vgs = 0.75 – 0.7 = 0.05V
Igss
Gate Leakage Current Vgd = Vgs = -3V
µA
—
—
200
NF
Noise Figure ^[1]
f = 2 GHz Vds = 3V, Ids = 60 mA
dB ­
—
0.5
0.9
Vds = 4V, Ids = 60 mA
dB
—
0.5
—
Gain
Gain^[1]
f = 2 GHz Vds = 3V, Ids = 60 mA
dB
Vds = 4V, Ids = 60 mA
dB
15.5
17.5
18.5
—
18.1
—
OIP3
Output 3^rd Order
f = 2 GHz
Intercept Point^[1]
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
dBm
33
dBm
—
35.8
—
35.9
—
P1dB
1dB Compressed
f = 2 GHz
Output Power^[1]
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
dBm
—
dBm
—
21.4
—
22.1
—
Notes:
1. Measurements obtained using production test board described in Figure 5.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.11
Γ_ang = 141
(0.5 dB loss)
Output
Matching Circuit
DUT
Γ_mag = 0.314
Γ_ang = -167
(0.5 dB loss)
50 Ohm
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and OIP3 measurements. This circuit ­represents a trade-off between an opti-
mal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Fmin
Minimum Noise Figure ^[2] f = 900 GHz Vds = 3V, Ids = 60 mA
dB ­
—
0.16
—

f = 2 GHz Vds = 3V, Ids = 60 mA
dB
—
0.46
—

f = 3.9 GHz Vds = 3V, Ids = 60 mA
dB
—
0.8
—

f = 5.8 GHz Vds = 3V, Ids = 60 mA
dB
—
1.17
—
Ga
Associated Gain^[2]
f = 900 GHz Vds = 3V, Ids = 60 mA
dB

f = 2 GHz Vds = 3V, Ids = 60 mA
dB

f = 3.9 GHz Vds = 3V, Ids = 60 mA
dB

f = 5.8 GHz Vds = 3V, Ids = 60 mA
dB
—
22.4
—
—
18.7
—
—
14.5
—
—
11.9
—
OIP3
Output 3^rd Order
Intercept Point^[3]


f = 900 GHz

f = 3.9 GHz
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dBm
—
dBm
—
dB
—
dB
—
35
—
35.1
—
36.6
—
37.6
—
P1dB
1dB Compressed
Output Power^[3]


f = 900 GHz

f = 3.9 GHz
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dBm
—
dBm
—
dB
—
dB
—
19.5
—
20.8
—
20.4
—
19.4
—
Notes:
2. Fmin and associated gain at minimum noise figure (Ga) values are based on a set of 16 noise figure measurements made at 16 different im‑
pedances using an ATN NP5 test system. From these measurements a true Fmin and Ga is calculated. Refer to the noise parameter application
section for more information.
3. P_1dB and OIP3 measurements made in an InterContinental Microwave (ICM) test fixture with double stub tuners and bias tees. The input was
tuned for minimum noise figure and the output was tuned for maximum OIP3.