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THN5702F Datasheet, PDF (7/8 Pages) AUK corp – SiGe NPN Transistor
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THN5702F
□ Application Information ( f = 434 MHz )
Operation Mode
CW, class-AB
f (MHz)
434
VCE (V)
3.0
POUT (dBm)
25
GP (dB)
15
ηC (%)
47
Output Power or Power Gain
vs. Input Power
35
28
f = 434 MHz, V = 3.0 V, I = 5 mA
CC
CQ
30
24
25
20
P
OUT
20
G
16
P
15
12
10
8
5
4
0 2 4 6 8 10 12 14 16
Input Power, P (dBm)
IN
Collector Current or Power Added Efficiency
vs. Input Power
0.8
80
f = 434 MHz, V = 3.0 V, I = 5 mA
CC
CQ
0.7
70
0.6
60
0.5
50
η
C
0.4
40
0.3
30
I
C
0.2
20
0.1
10
0.0
0
0 2 4 6 8 10 12 14 16
Input Power, P (dBm)
IN
Output Power or Power Gain
vs. Input Power
35
28
f = 434 MHz, V = 3.0 V, I = 50 mA
CE
CQ
30
24
P
OUT
25
20
G
P
20
16
15
12
10
8
5
4
0 2 4 6 8 10 12 14 16
Input Power, P (dBm)
IN
Collector Current or Power Added Efficiency
vs. Input Power
0.8
80
f = 434 MHz, V = 3.0 V, I = 50 mA
CE
CQ
0.7
70
0.6
60
0.5
50
η
C
0.4
40
I
0.3
C
30
0.2
20
0.1
10
0.0
0
0 2 4 6 8 10 12 14 16
Input Power, P (dBm)
IN
7
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