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THN5702F Datasheet, PDF (6/8 Pages) AUK corp – SiGe NPN Transistor
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THN5702F
□ Application Information ( f = 434 MHz )
Operation Mode
CW, class-AB
f (MHz)
434
VCE (V)
2.2
POUT (dBm)
24
GP (dB)
14
ηC (%)
38
Output Power or Power Gain
vs. Input Power
35
28
f = 434 MHz, V = 2.2 V, I = 5 mA
CC
CQ
30
24
25
P
OUT
20
15
20
16
G
P
12
10
8
5
4
0 2 4 6 8 10 12 14 16
Input Power, P (dBm)
IN
Collector Current or Power Added Efficiency
vs. Input Power
0.6
60
f = 434 MHz, V = 2.2 V, I = 5 mA
CC
CQ
0.5
50
0.4
40
η
C
0.3
30
0.2
20
I
C
0.1
10
0.0
0
0
2 4 6 8 10 12 14 16
Input Power, P (dBm)
IN
Output Power or Power Gain
vs. Input Power
35
28
f = 434 MHz, V = 2.2 V, I = 50 mA
CE
CQ
30
24
25
P
OUT
20
15
20
16
G
P
12
10
8
5
4
0 2 4 6 8 10 12 14 16
Input Power, P (dBm)
IN
Collector Current or Power Added Efficiency
vs. Input Power
0.6
60
f = 434 MHz, V = 2.2 V, I = 50 mA
CE
CQ
0.5
50
0.4
40
η
C
0.3
30
0.2
20
I
C
0.1
10
0.0
0
0 2 4 6 8 10 12 14 16
Input Power, P (dBm)
IN
6
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