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THN5702F Datasheet, PDF (2/8 Pages) AUK corp – SiGe NPN Transistor
◁
□ Thermal Characteristics
Symbol
Rth j-a
Parameter
Thermal Resistance from Junction to Ambient
THN5702F
Value
Unit
80
K/W
□ Electrical Characteristics (TA = 25 ℃)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Power Gain
Output Power
Reverse Transfer Capacitance
ICBO
ICEO
IEBO
hFE
GP
POUT
Cre
VCB = 13 V, IE = 0 mA
VCE = 7 V, IB = 0 mA
VEB = 1.0 V, IC = 0 mA
VCE = 4.5 V, IC = 150 mA
VCE = 3.6 V, IC = 30 mA(RF off),
f = 460 MHz, PIN=0dBm
VCE = 4.5 V, IC = 50 mA(RF off),
f = 460 MHz, PIN=0dBm
VCE = 6.0 V, IC = 30 mA(RF off),
f = 460 MHz, PIN=0dBm
VCE = 3.0 V, IC = 50 mA(RF off),
f = 434 MHz, PIN=0dBm
VCE = 3.6 V, IC = 30 mA(RF off),
f = 460 MHz, PIN=15dBm
VCE = 4.5 V, IC = 50 mA(RF off),
f = 460 MHz, PIN=15dBm
VCE = 6.0 V, IC = 30 mA(RF off),
f = 460 MHz, PIN=15dBm
VCE = 3.0 V, IC = 50 mA(RF off),
f = 434 MHz, PIN=10dBm
VCB = 4.5 V, IE = 0 mA, f = 1 MHz
Min. Typ. Max. Unit
-
-
2.5
㎂
-
-
1.5
㎂
-
-
1.5
㎂
40
300
12
14
-
dB
13
15
-
dB
13
15
-
dB
14
16
-
dB
27
29
-
dBm
28
30
-
dBm
29
31
-
dBm
23
25
-
dBm
- 6.5 8.0
pF
□ hFE Classification
Marking
hFE Value
PC1
40 - 200
PC2
170 - 300
2
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