THN5702F Datasheet, PDF (1/8 Pages) AUK corp – SiGe NPN Transistor

Semiconductor
THN5702F
SiGe NPN Transistor
□ Applications
- VHF and UHF wide band amplifier
□ Features
- Medium power(800mW, 1W) application
- Power gain
G_P = 14 dB at V_CE = 3.6 V, f = 460 MHz, P_IN = 0 dBm
G_P = 15 dB at V_CE = 4.5 V, f = 460 MHz, P_IN = 0 dBm
G_P = 15 dB at V_CE = 6.0 V, f = 460 MHz, P_IN = 0 dBm
G_P = 16 dB at V_CE = 3.0 V, f = 434 MHz, P_IN = 0 dBm
- Output power
P_OUT = 29 dBm at V_CE = 3.6 V, I_CQ = 30 mA, f = 460 MHz
P_OUT = 30 dBm at V_CE = 4.5 V, I_CQ = 50 mA, f = 460 MHz
P_OUT = 31 dBm at V_CE = 6.0 V, I_CQ = 30 mA, f = 460 MHz
P_OUT = 25 dBm at V_CE = 3.0 V, I_CQ = 50 mA, f = 434 MHz
□ Absolute Maximum Ratings (T_A = 25 ℃)
Param eter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Sym bol
BV_CBO
BV_CEO
BV_EBO
I_C
P_tot
T_j
T_stg
SOT-89
Unit in mm
3
4
2
1
Pin Configuration
1. Base
2. Emitter
3. Collector
4. Emitter
Ratings
Unit
15
V
10
V
1.5
V
800
mA
1.5
W
150
℃
-65 ~ 150
℃
1