THN5702F Datasheet, PDF (3/8 Pages) AUK corp – SiGe NPN Transistor

THN5702F
□ Typical Characteristics ( T_A = 25℃, unless otherwise specified)
Collector Current
vs. Base to Emitter Voltage
100
V = 4.5 V
CE
80
60
40
20
0
0.0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage, V [V]
BE
Reverse Transfer Capacitance
vs. Collector to Base Voltage
12
f = 1 MHz
11
10
9
8
7
6
5
4
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Collector to Base Voltage, V (V)
CB
DC Current Gain
vs. Collector Current
150
V = 4.5 V
CE
125
100
75
50
25
0
0.01
0.1
1
Collector Current, I (A)
C
Collector Current
vs. Collector to Emitter Voltage
0.9
0.8
0.7
8 mA
0.6
6 mA
0.5
0.4
4 mA
0.3
0.2
I = 2 mA
B
0.1
0.0
01234567
Collector to Emitter Voltage, V (V)
CE
3