THN6501F Datasheet, PDF (5/11 Pages) AUK corp – SiGe NPN Transistor

THN6501F
Insertion Power Gain, |S₂₁|² vs. I_C
C_CB vs. V_CB
11
f = 1 GHz
10
9
8
V_CE = 10 V
V_CE = 6 V
V_CE = 3 V
V_CE = 2 V
7
6
0
20
40
60
80
I_C [mA]
1.4
f = 1MHz
1.3
1.2
1.1
1
0.9
0.8
0
5
10 15 20 25 30
V_CB [V]
NF vs. I_C
V_CE = 3 V, I_C = parameter, Z_S = Z_Sopt
2
f = 1 GHz
1.8
1.6
1.4
1.2
1
0.8
0.6
0
5 10 15 20 25 30 35 40 45 50 55
I_C [mA]
Noise Figure Contours & Constant Gain
f = 1 GHz, V_CE = 3 V, I_C = 7 mA
Output Stable
Input Stable
G_A = 12 dB
= 11 dB
= 10 dB
= 9 dB
= 8 dB
5 contour
Γ_OPT=0.365∠166
NF = 1.0 dB
= 1.1 dB
= 1.2 dB
= 1.3 dB
4 contour
5