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| THN6501F Datasheet, PDF (2/11 Pages) AUK corp – SiGe NPN Transistor | |||
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THN6501F
â¡ Electrical Characteristics ( TA = 25 â )
Symbol
Parameter
Test Condition
Value
Unit
Min. Typ. Max.
ICBO
Collector Cut-off Current
ICEO
VCB = 10V, IE = 0 mA
VCE = 12uA, IB = 0 mA
0.5 uA
5
uA
IEBO Emitter Cut-off Current
VEB = 1V, IC = 0 mA
0.5 uA
hFE DC Current Gain
VCE = 3V, Ic = 7mA
80
- 300
fT
Transition Frequency
VCE = 10V, Ic = 20mA
6.7
GHz
CCB Collector to Base Capacitance VCB = 10V, f = 1MHz
1.02
pF
â¡ Performance Characteristics
Symbol
Parameter
Test Condition
Value
Unit
Min. Typ. Max.
VCE = 3 V, IC = 20 mA, f = 1 GHz
9.5
|S21|2 Insertion Power Gain
dB
VCE = 10 V, IC = 20 mA, f = 1 GHz
9.8
VCE = 3 V, IC = 20 mA, f = 1 GHz
11.0
MAG Maximum Available Gain
dB
VCE = 10 V, IC = 20 mA, f = 1 GHz
11.5
NFmin Minimum Noise Figure VCE = 3 V, IC = 7 mA, f = 1 GHz
1.0
dB
rn Noise Resistance
VCE = 3 V, IC = 7 mA, f = 1 GHz
0.056
â¦
2
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