THN6501F Datasheet, PDF (1/11 Pages) AUK corp – SiGe NPN Transistor

Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure
NF = 1.0 dB at f = 1 GHz, V_CE = 3 V, I_C = 7 mA
o High Gain
MAG = 11.5 dB at f = 1 GHz, V_CE = 10 V, I_C = 20 mA
o High Transition Frequency
f_T = 7 GHz at f = 1 GHz, V_CE = 10 V, I_C = 30 mA
THN6501F
SiGe NPN Transistor
SOT-89
Unit in mm
4
□ h_FE Classification
Marking
AB1
h_FE
125 to 300
AB2
80 to 160
Pin Configuration
Pin No Symbol
1
B
2, 4
C
3
E
Description
Base
Collector
Emitter
□ Absolute Maximum Ratings
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_T
T_STG
T_J
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ratings
Unit
25
V
12
V
2.5
V
100
mA
400
mW
-65 ~ 150
℃
150
℃
1