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THN6501F Datasheet, PDF (3/11 Pages) AUK corp – SiGe NPN Transistor
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THN6501F
Total Power Dissipation PT vs. TA
IC vs. VCE
500
400
300
200
100
0
0
50
100
150
Ambient Temperature, TA [℃]
80
70
IB=500uA
60
IB=400uA
50
IB=300uA
40
IB=200uA
30
20
IB=100uA
10
0
0
2
4
6
8
10
VCE [V]
IC vs. VBE
hFE vs. IC
120
VCE = 6 V
100
300
VCE = 3 V
250
80
200
60
150
40
100
20
50
0
0
0.2
0.4
0.6
0.8
1
VBE [V]
0
0.1
1
10
100
IC [mA]
3
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