THN6501F Datasheet, PDF (4/11 Pages) AUK corp – SiGe NPN Transistor

THN6501F
Maximum Available Gain, MAG vs. Frequency Insertion Power Gain, |S₂₁|² vs. Frequency
25
25
20
15
V_CE = 10 V
I_C = 20 mA
10
V_CE = 3 V
5
I_C = 20 mA
0
0
0.5
1
1.5
2
2.5
3
Frequency [GHz]
20
15
V_CE = 10 V
10
I_C = 20 mA
5
V_CE = 3 V
I_C = 20 mA
0
0
0.5
1
1.5
2
2.5
3
Frequency [GHz]
Transition Frequency : f_T vs. I_C
8
f = 1 GHz
V_CE = 10 V
7
V_CE = 6 V
6
V_CE = 3 V
V_CE = 2 V
5
4
Maximum Available Gain, MAG vs. I_C
13
f = 1 GHz
12
V_CE = 10 V
V_CE = 6 V
11
V_CE = 3 V
10
V_CE = 2 V
9
3
8
0
20
40
60
80
0
20
40
60
80
I_C [mA]
I_C [mA]
4