ATA6616 Datasheet, PDF (264/308 Pages) ATMEL Corporation – Single-package High Performance, Low Power AVR 8-bit Microcontroller with LIN

5. A: The EEPROM array is programmed one byte at a time by supplying the address
and data together with the appropriate Write instruction. An EEPROM memory loca-
tion is first automatically erased before new data is written. If polling (RDY/BSY) is not
used, the user must wait at least t _{WD_EEPROM} before issuing the next byte. (See Table
4-79) In a chip erased device, no 0xFFs in the data file(s) need to be programmed.
B: The EEPROM array is programmed one page at a time. The Memory page is
loaded one byte at a time by supplying the 2LSB of the address and data together
with the Load EEPROM Memory Page instruction. The EEPROM Memory Page is
stored by loading the Write EEPROM Memory Page Instruction with the 6MSB of the
address. When using EEPROM page access only byte locations loaded with the
Load EEPROM Memory Page instruction is altered. The remaining locations remain
unchanged. If polling (RDY/BSY) is not used, the used must wait at least t _{WD_EEPROM}
before issuing the next page (See Table 4-74). In a chip erased device, no 0xFF in
the data file(s) need to be programmed.
6. Any memory location can be verified by using the Read instruction which returns the
content at the selected address at serial output MISO.
7. At the end of the programming session, RESET can be set high to commence normal
operation.
8. Power-off sequence (if needed):
Set RESET to “1”.
Turn Vcc power off.
Table 4-79. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol
Minimum Wait Delay
t _{WD_FLASH}
t _{WD_EEPROM}
t _{WD_ERASE}
t _{WD_FUSE}
4.5ms
4.0ms
4.0ms
4.5ms
264 Atmel ATA6616/ATA6617
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