English
Language : 

PC28F512G18FF Datasheet, PDF (9/118 Pages) Micron Technology – 128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
Configuration and Memory Map
Configuration and Memory Map
The device features a symmetrical block architecture. The main array of the 128Mb de-
vice is divided into eight 16Mb partitions. Each partition is divided into eight 256KB
blocks (8 x 8 = 64 blocks).
The main array of the 256Mb device is divided into eight 32Mb partitions. Each parti-
tion is divided into sixteen 256KB blocks (8 x 16 = 128 blocks).
The main array of the 512Mb device is divided into eight 64Mb partitions. Each parti-
tion is divided into thirty-two 256KB blocks (8 x 32 = 256 blocks).
The main array of the 1Gb device is divided into eight 128Mb partitions. Each partition
is divided into sixty-four 256KB blocks (8 x 64 = 512 blocks).
Each block is divided into as many as 256 1KB programming regions. Each region is
divided into as many as thirty-two 32-byte segments
Table 1: Main Array Memory Map – 128Mb, 256Mb
Partition
7
6
5
4
3
Size
(Mb)
16
16
16
16
16
128Mb
Block #
63
.
.
.
56
55
.
.
.
48
47
.
.
.
40
39
.
.
.
32
31
.
.
.
24
Address Range
07E0000-07FFFFF
.
.
.
0700000-071FFFF
06E0000-06FFFFF
.
.
.
0600000-061FFFF
05E0000-05FFFFF
.
.
.
0500000-051FFFF
04E0000-04FFFFF
.
.
.
0400000-041FFFF
03E0000-03FFFFF
.
.
.
0300000-031FFFF
Size
(Mb)
32
32
32
32
32
256Mb
Block #
127
.
.
.
112
111
.
.
.
96
95
.
.
.
80
79
.
.
.
64
63
.
.
.
48
Address Range
FF0000-FFFFFF
.
.
.
FD0000-FDFFFF
0DE0000-0DFFFFF
.
.
.
0C00000-0C1FFFF
0BE0000-0BFFFFF
.
.
.
0A00000-0A1FFFF
09E0000-09FFFFF
.
.
.
0800000-081FFFF
07E0000-07FFFFF
.
.
.
0600000-061FFFF
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
9
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.