PC28F512G18FF Datasheet, PDF (64/118 Pages) Micron Technology – 128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory

128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
AC Read Specifications
Table 40: AC Read Specifications (CLK-Latching, 133 MHz), V_CCQ = 1.7V to 2.0V (Continued)
Note 1 applies to all parameters
Parameter
CLK fall/rise time
Synchronous Specifications
Address setup to CLK HIGH
ADV# LOW setup to CLK HIGH
CE# LOW setup to CLK HIGH
CLK to output valid
Output hold from CLK HIGH
Address hold from CLK HIGH
CLK HIGH to WAIT valid
ADV# HIGH hold from CLK
WAIT hold from CLK
ADV# hold from CLK HIGH
CLK to OE# LOW (A/D MUX only)
Read access time from address latching clock
ADV# pulse width LOW for sync reads
ADV# HIGH to CLK HIGH
Symbol
t_FCLK/RCLK
t_AVCH
t_VLCH
t_ELCH
t_CHQV
t_CHQX
t_CHAX
t_CHTV
t_CHVL
t_CHTX
t_CHVH
t_CHGL
t_ACC
t_VLVH
t_VHCH
Min
0.3
96ns
Max
1.2
2
–
2
–
2.5
–
–
5.5
2
–
2
–
–
5.5
2
–
2
–
2
–
2
–
96
–
1
2
2
–
Unit
ns
Notes
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
ns
ns
clocks
4
ns
4
Notes:
1. See Electrical Specifications – AC Characteristics and Operating Conditions for timing
measurements and MAX allowable input slew rate.
2. OE# can be delayed by up to ^tELQV - ^tGLQV after the CE# falling edge without impact to
t_ELQV.
3. Sampled, not 100% tested.
4. For 45nm devices, these specifications are not required as a result of the enhanced CLK-
latching scheme. See the StrataFlash^® Cellular Memory 65nm to 45nm M Family Migra-
tion Guide and the StrataFlash^® Cellular Memory 65nm to 45nm M Family Latching
Scheme Migration Guide for more information.
AC Read Timing
The Synchronous read timing waveforms apply to both 108 and 133 MHz devices. How-
ever, devices that only support up to 108 MHz need not meet the following timing spec-
ifications.
• ^tCHVH
• ^tCHGL
• ^tACC
• ^tVLVH
• ^tVHCH
Note: The WAIT signal polarity in all the timing waveforms is low-true (RCR10 = 0).
WAIT is shown as de-asserted with valid data (RCR8 = 0). WAIT is de-asserted during
asynchronous reads.
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
64
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