APT15GP60BDF1 Datasheet, PDF (9/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

+15v
0v
-15v
Vr
30µH
D.U.T.
di_F/dt Adjust
PEARSON 2878
CURRENT
TRANSFORMER
APT15GP60BDF1
trr/Qrr
Waveform
Figure 10. Diode Reverse Recovery Test Circuit and Waveforms
1 I_F - Forward Conduction Current
2
di_F/dt
-
Current
Current
Rate of Decrease, Rate of Diode
Change Through Zero Crossing
From Positive to Negative.
3 I_RRM - Maximum Reverse Recovery Current.
1
Zero
4 trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through I_RRM and 0.25 I_RRM passes through zero.
2
5 Qrr - Area Under the Curve Defined by I_RRM and trr.
6 di_M/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
4
5
3
Junction
temp. ( ”C)
RC MODEL
0.698
Figure 34, Diode Reverse Recovery Waveform and Definitions
0.00173F
6
0.25 IRRM
Slope = di_M/dt
Power
(Watts)
0.438
0.0395F
0.165
0.670F
Case temperature
TRANSIENT THERMAL IMPEDANCE MODEL
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.55 (.138)
3.81 (.150)
4.50 (.177) Max.
2.87 (.113)
3.12 (.123)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
1.65 (.065)
2.13 (.084)
Gate
Collector
(Cathode)
Emitter
(Anode)
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.