APT15GP60BDF1 Datasheet, PDF (8/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

100
80
60
T_J = 175°C
40
T_J = 150°C
T_J = 100°C
T_J = 25°C
20
0
0
1
2
3
4
5
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 26, Forward Voltage vs. Forward Current
16
T_J = 100°C
14
V_R = 400V
30A
12
10
15A
8
7.5A
6
4
2
0
0
200 400 600 800 1000
di_F /dt, CURRENT RATE OF DECREASE (A/µs)
Figure 28, Reverse Recovery Current vs. Current Rate of Decrease
100
T_J = 100°C
V_R = 350V
80
30A
60
15A
7.5A
40
20
0
0
200 400 600 800 1000
di_F /dt, CURRENT RATE OF DECREASEs (A/µs)
Figure 30, Reverse Recovery Time vs. Current Rate of Decrease
250
200
150
100
50
0
.3
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 32, Junction Capacitance vs. Reverse Voltage
500
450
T_J = 100°C
V_R = 400V
400
30A
350
300
APT15GP60BDF1
15A
250
7.5A
200
150
100
50
0
0
200 400 600 800 1000
di_F /dt, CURRENT RATE OF DECREASE(A/µs)
Figure 27, Reverse Recovery Charge vs. Current Rate of Decrease
1.6
1.4
Q_rr
1.2
t_rr
1.0 ^IRRM
0.8 ^trr
0.6
Q_rr
0.4
0.2
0.0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 29, Dynamic Parameters vs. Junction Temperature
30
120
25
V_fr
100
20
80
15
60
10
t_fr
40
5
20
T_J = 100°C
V_R = 400V
0
I_F = 15A
0
0
200 400 600 800 1000
di_F /dt, CURRENT RATE OF DECREASE (A/µs)
Figure 31, Forward Recovery Voltage/Time vs. Current Rate of Decrease
30
25
20
15
10
5
0
25
50
75
100 125 150
Case Temperature (°C)
Figure 33, Maximum Average Forward Current vs.
CaseTemperature