APT15GP60BDF1 Datasheet, PDF (3/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
30
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
25
20
15
10
T_C=25°C
5 T_C=125°C
T_C=-55°C
0
0 0.5 1 1.5 2 2.5 3
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V_GE = 15V)
100
250µs PULSE TEST
<0.5 % DUTY CYCLE
TJ = -55°C
80
60
40
TJ = 25°C
20
TJ = 125°C
0
0
2
4
6
8 10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.5
TJ = 25°C.
250µs PULSE TEST
3
<0.5 % DUTY CYCLE
I_C = 7.5A
2.5
I_C =30A
2
I_C = 15A
1.5
1
0.5
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
30
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
25
APT15GP60BDF1
20
15
10
T_C=25°C
5
T_C=125°C
T_C=-55°C
0
0 0.5 1 1.5 2 2.5 3
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V_GE = 10V)
16
I_C = 15A
14 ^{TJ = 25°C}
12
V_CE = 120V
10
V_CE = 300V
8
V_CE = 480V
6
4
2
0
0 10 20 30 40 50 60
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3.5
3
I_C =30A
2.5
I_C = 15A
2
I_C = 7.5A
1.5
1
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature