APT15GP60BDF1 Datasheet, PDF (7/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT15GP60BDF1
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: T_C = 25°C unless otherwise specified.
APT15GP60BDF1
UNIT
I_F(AV) _{Maximum Average Forward Current (TC = 94°C, Duty Cycle = 0.5)}
I_F(RMS) _{RMS Forward Current}
15
36
Amps
I_{FSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)}
110
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
I_F = 15A
I_F = 30A
I_F = 15A, T_J = 150°C
2.2
2.7
Volts
1.6
DYNAMIC CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
t_rr1
t_rr2
t_fr1
t_fr2
I_RRM1
I_RRM2
Q_rr1
Q_rr2
V_fr1
V_fr2
Reverse Recovery Time
I_F = 15A, di_F/dt = -200A/µs, V_R = 400V
Forward Recovery Time
I_F = 15A, di_F/dt = 200A/µs, V_R = 400V
Maximum Reverse Recovery Current
I_F = 15A, di_F/dt = -200A/µs, V_R = 400V
Reverse Recovery Charge
I_F = 15A, di_F/dt = -200A/µs, V_R = 400V
Forward Recovery Voltage
I_F = 15A, di_F/dt = 200A/µs, V_R = 400V
T_J = 25°C
56
T_J = 100°C
58
ns
T_J = 25°C
106
T_J = 100°C
106
T_J = 25°C
2.3
Amps
T_J = 100°C
6
T_J = 25°C
77
nC
T_J = 100°C
235
T_J = 25°C
5
Volts
T_J = 100°C
5
1.4
1.2
0.9
1.0
0.7
0.8
0.6
0.4
0.2
0
10^-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION