APT50GF60B2RD Datasheet, PDF (6/7 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.

APT50GF60B2RD/LRD
200
2500
T_J = 100°C
V_R = 350V
160
2000
T_J = 150°C
120
T_J = 100°C
80
T_J = 25°C
T_J = -55°C
40
1500
1000
500
120A
60A
30A
0
0
0.5
1.0
1.5
2.0
2.5
V_F, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 1, Forward Voltage Drop vs Forward Current
0
10
50 100
500 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 2, Reverse Recovery Charge vs Current Slew Rate
50
2.0
T_J = 100°C
V_R = 350V
120A
40
60A
Y 30
30A
R ₂₀
A ₁₀
IN 0
0
200 400 600 800 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Current vs Current Slew Rate
IM ²⁰⁰
T_J = 100°C
V_R = 350V
L ₁₆₀
120A
60A
E _30A
120
PR ⁸⁰
1.6
1.2
t_rr
0.8
I_RRM
0.4
Q_rr
t_rr
Q_rr
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 4, Dynamic Parameters vs Junction Temperature
1200
1000
T_J = 100°C
V_R = 350V
I_F = 60A
15.0
12.5
800
V_fr
10.0
600
7.5
400
5.0
40
200
T_fr
2.5
0
0
200 400 600 800 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
0.7
0.5
D=0.5
0
0
0
200 400 600 800 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
0.1
0.05
0.01
0.005
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.00110_-5
10^-4
10^-3
10^-2
10^-1
RECTAVNRG,URLEAVREPRUSLESVEODLUTARGATEIO(VNO(LSTESC) ONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
1.0
10