APT50GF60B2RD Datasheet, PDF (5/7 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.

APT50GF60B2RD/LRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
MAXIMUM RATINGS (FRED)
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
APT50GF60B2RD/LRD UNIT
V_R
V_RRM
V_RWM
I_F(AV)
I_F(RMS)
I_FSM
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T_C = 85°C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
600
Volts
60
100
Amps
600
STATIC ELECTRICAL CHARACTERISTICS (FRED)
Symbol Characteristic / Test Conditions
V_F
Maximum Forward Voltage
I_F = 60A
I_F = 120A
I_F = 60A, T_J = 150°C
MIN TYP MAX UNIT
1.8
1.75
Volts
1.5
DYNAMIC CHARACTERISTICS (FRED)
Symbol Characteristic
MIN
t_rr1
t_rr2
t_rr3
t_fr1
t_fr2
I_RRM1
I_RRM2
Q_rr1
Q_rr2
V_fr1
V_fr2
diM / dt
Reverse Recovery Time, I_F = 1.0A, di_F/dt = -15A/µs, V_R = 30V, T_J = 25°C
Reverse Recovery Time
T_J = 25°C
I_F = 60A, di_F/dt = -480A/µs, V_R = 350V
T_J = 100°C
Forward Recovery Time
T_J = 25°C
I_F = 60A, di_F/dt = 480A/µs, V_R = 350V
T_J = 100°C
Reverse Recovery Current
T_J = 25°C
I_F = 60A, di_F/dt = -480A/µs, V_R = 350V
T_J = 100°C
Recovery Charge
T_J = 25°C
I_F = 60A, di_F/dt = -480A/µs, V_R = 350V
T_J = 100°C
Forward Recovery Voltage
T_J = 25°C
I_F = 60A, di_F/dt = 480A/µs, V_R = 350V
T_J = 100°C
Rate of Fall of Recovery Current
T_J = 25°C
I_F = 60A, di_F/dt = -480A/µs, V_R = 350V
T_J = 100°C
TYP
55
70
90
160
160
10
20
350
900
6
6
800
500
MAX
70
UNIT
ns
17
Amps
30
nC
Volts
A/µs