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APT50GF60B2RD Datasheet, PDF (3/7 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.
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APT50GF60B2RD/LRD
PRELIMINARY
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
320
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
80
W
P
tot
240
A
I
C
60
200
50
160
40
120
30
80
20
40
0
0 20 40 60 80 100 120 °C 160
TC
10
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
A
I
C 10 2
tp = 2.9µs
10 µs
10 1
100 µs
1 ms
10 ms
10 0
DC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
K/W
Z
thJC
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -1
10 0
10 1
10 2
V 10 3
VCE
10 -3
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
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