APT50GF60B2RD Datasheet, PDF (2/7 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.

DYNAMIC CHARACTERISTICS (IGBT)
Symbol Characteristic
Test Conditions
MIN
C_ies
C_oes
C_res
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance
V_GE = 0V
V_CE = 25V
f = 1 MHz
Total Gate Charge ³
Gate Charge
Gate-Emitter Charge
V_GE = 15V
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Y _{Rise Time}
R _{Turn-off Delay Time}
A _{Fall Time}
Turn-on Delay Time
IN _{Rise Time}
Turn-off Delay Time
IM _{Fall Time}
L Turn-on Switching Energy ⁴
Turn-off Switching Energy
E _{Total Switching Losses 4}
R _{Turn-on Delay Time}
P _{Rise Time}
V_CC = 0.5V_CES
I_C = I_C2
Resistive Switching (25°C)
V_GE = 15V
V_CC = .8V_CES
I_C = I_C2
R_G = 10Ω
Inductive Switching (150°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
R_G = 10Ω
T_J = +150°C
Inductive Switching (25°C)
V_CLAMP(Peak) = 0.66V_CES
Turn-off Delay Time
V_GE = 15V
I_C = I_C2
Fall Time
R_G = 10Ω
Total Switching Losses ⁴
T_J = +25°C
Forward Transconductance
V_CE = 20V, I_C = I_C2
6
APT50GF60B2RD/LRD
TYP MAX UNIT
2600 3600
475 710 pF
165 250
170 225
25
45
nC
100 140
20
100
ns
160
200
30
50
90 135
ns
290 435
170 340
2.2
2.4
mJ
4.6
30
90
ns
260
100
4.3
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol Characteristic
MIN
R_ΘJC
Junction to Case (IGBT)
Junction to Case (FRED)
R_ΘJA Junction to Ambient
W_T Package Weight
Torque Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature.}
2 _{Leakages include the FRED and IGBT.}
3 _{See MIL-STD-750 Method 3471}
4 _{Switching losses include the FRED and IGBT.}
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYP
0.22
6.1
MAX
0.42
0.66
40
10
1.1
UNIT
°C/W
oz
gm
lb•in
N•m