APT50GF60B2RD Datasheet, PDF (4/7 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.

APT50GF60B2RD/LRD
PRELIMINARY
Typ. output characteristics
I_C = f (V_CE)
parameter: t_p = 80 µs, T_j = 25 °C
100
A
17V
I_C
80
15V
13V
11V
70
9V
7V
60
50
40
30
20
10
0
0
1
2
3
V
5
V_CE
Typ. output characteristics
I_C = f (V_CE)
parameter: t_p = 80 µs, T_j = 125 °C
100
A
17V
I_C
80
15V
13V
11V
70
9V
7V
60
50
40
30
20
10
0
0
1
2
3
V
5
V_CE
Short circuit safe operating area
I_Csc = f (V_CE) , T_j = 150°C
parameter: V_GE = ± 15 V, t_sc ≤ 10 µs, L < 50 nH
Reverse biased safe operating area
I_Cpuls = f (V_CE) , T_j = 150°C
parameter: V_GE = 15 V
10
2.5
II_CCsc//II_CC(290°C)
6
II_CCppuulsles/I_C1
1.5
4
1.0
2
0.5
0
0 100 200 300 400 500 600 V 800
V_CE
0.0
0
100 200 300 400 500 600
V 800
V_CE
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
USA
405 S.W. Columbia Street
F-33700 Merignac - France
Bend, Oregon 97702 -1035
Phone: [phone]
Phone: [phone]
FAX: [phone]
FAX: [phone]