APT200GN60J Datasheet, PDF (6/6 Pages) Advanced Power Technology – Intergrated Gate Resistor: Low EMI, High Reliability

APT100DQ60
V_CC
I_C
V_CE
A
D.U.T.
Figure 21, Inductive Switching Test Circuit
APT200GN60J
10%
t_d(on)
t_r
5%
Switching Energy
Gate Voltage
T_J = 125°C
Collector Current
90%
10%
5%
Collector Voltage
Figure 22, Turn-on Switching Waveforms and Definitions
90%
t_d(off)
Switching Energy
Gate Voltage
T_J = 125°C
Collector Voltage
90%
t_f
10%
0
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
V_TEST
*DRIVER SAME TYPE AS D.U.T.
A
100uH
A
DRIVER*
V_CE
I_C
V_CLAMP
B
D.U.T.
Figure 24, EON1 Test Circuit
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
* Emitter
* Emitter
1.95 (.077)
2.14 (.084)
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Gate
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.