APT200GN60J Datasheet, PDF (4/6 Pages) Advanced Power Technology – Intergrated Gate Resistor: Low EMI, High Reliability

70
60
50
V_GE = 15V
40
30
20
V_CE = 400V
10 ^TJ ^{= 25°C, T}J ^=125°C
R_G = 5Ω
L = 100 µH
0
5 25 45 65 85
105 125 145 165
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
60 _{RG = 5Ω, L = 100µH, VCE = 400V}
50
40
30
20
T_J = 25 or 125°C,V_GE = 15V
10
0 _{5 25 45 65 85 105 125 145 165}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
12000
10000
V_CE = 400V
V_GE = +15V
R_G = 5Ω
T_J = 125°C,V_GE =15V
8000
6000
4000
2000
T_J = 25°C,V_GE =15V
0 _{5 25 45 65 85 105 125 145 165}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
60000
50000
V_CE = 400V
V_GE = +15V
T_J = 125°C
E_off,150A
40000
E_on2,150A
30000
E_off,100A
20000
E_on2,100A
10000
E_off,50A
0
E_on2,50A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT200GN60J
1200
1000
800
600
V_GE =15V,T_J=125°C
V_GE =15V,T_J=25°C
400
200 V_CE = 400V
R_G = 5Ω
L = 100 µH
0
5 25 45 65 85 105 125 145 165
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
R_G = 5Ω, L = 100µH, V_CE = 400V
80
T_J = 125°C, V_GE = 15V
60
T_J = 25°C, V_GE = 15V
40
20
0 _{5 25 45 65 85 105 125 145 165}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
12000
10000
V_CE = 400V
V_GE = +15V
R_G = 5Ω
T_J = 25°C, V_GE = 15V
8000
6000
4000
T_J = 125°C, V_GE = 15V
2000
0 _{5 25 45 65 85 105 125 145 165}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
7000
V_CE = 400V
V_GE = +15V
6000 ^RG ^{= 5Ω}
E_off,150A
5000
E_on2,150A
4000
3000
E_off,100A
2000 ^Eon2,^100A
1000 ^Eoff,^50A
E_on2,50A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature