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| APT200GN60J Datasheet, PDF (1/6 Pages) Advanced Power Technology – Intergrated Gate Resistor: Low EMI, High Reliability | |||
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TYPICAL PERFORMANCE CURVES
APT200GAPNT2060G0N6J0J
600V
Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs
have ultra low VCE(ON) and are ideal for low frequency applications that require
absolute minimum conduction loss. Easy paralleling is a result of very tight
parameter distribution and a slightly positive VCE(ON) temperature coefï¬cient.
A built-in gate resistor ensures extremely reliable operation, even in the event
of a short circuit fault. Low gate charge simpliï¬es gate drive design and
minimizes losses.
⢠600V Field Stop
⢠Trench Gate: Low VCE(on)
⢠Easy Paralleling
⢠10µs Short Circuit Capability
⢠Intergrated Gate Resistor: Low EMI, High Reliability
Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor
ISOTOP®
"UL Recognized"
C
G
E
MAXIMUM RATINGS
Symbol Parameter
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
All Ratings: TC = 25°C unless otherwise speciï¬ed.
APT200GN60J
UNIT
600
Volts
±20
250
110
Amps
600
600A @600V
568
-55 to 150
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RGINT
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
Gate Threshold Voltage (VCE = VGE, I C = 3.2mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
600
5
5.8 6.5
1.05 1.45 1.85
1.65
1.15
1.19
4
TBD
600
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
mA
nA
â¦
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