APT200GN60J Datasheet, PDF (3/6 Pages) Advanced Power Technology – Intergrated Gate Resistor: Low EMI, High Reliability

TYPICAL PERFORMANCE CURVES
450
15 & 10V
400
7.5V
350
7V
300
250
6.5V
200
150
6V
100
50
5.5V
5V
0
0
5
10 15 20 25 30
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
400
250µs PULSE
TEST<0.5 % DUTY
350
CYCLE
300
T_J = -55°C
250
200
150
100
T_J = 25°C
50
T_J = 125°C
0
0
2
4
6
8
10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
2.5
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
2.0
I_C = 200A
1.5
I_C = 100A
1.0
I_C = 50A
0.5
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
450
15 & 10V
400
7.5V
350
7V
APT200GN60J
300
6.5V
250
200
6V
150
5.5V
100
5V
50
0
0
5
10 15 20 25 30
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 100A
14 ^{TJ = 25°C}
V_CE = 120V
12
V_CE = 300V
10
8
V_CE = 480V
6
4
2
0
0
2.0
200 400 600 800 1000 1200 1400
GATE CHARGE (nC)
FIGURE 4, Gate Charge
I_C = 200A
1.5
I_C = 100A
1.0
I_C = 50A
0.5
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
25
50
75
100
125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
300
250
200
Limited by Package
150
100
50
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature