APT200GN60J Datasheet, PDF (2/6 Pages) Advanced Power Technology – Intergrated Gate Resistor: Low EMI, High Reliability

DYNAMIC CHARACTERISTICS
APT200GN60J
Symbol
C_ies
C_oes
C_res
V_GEP
Q_g
Q_ge
Q_gc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA Switching Safe Operating Area
SCSOA Short Circuit Safe Operating Area
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ⁴
Turn-on Switching Energy (Diode) ⁵
Turn-off Switching Energy ⁶
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ^{4 4}
Turn-on Switching Energy (Diode) ⁵⁵
Turn-off Switching Energy ⁶⁶
Test Conditions
MIN
Capacitance
V_GE = 0V, V_CE = 25V
f = 1 MHz
Gate Charge
V_GE = 15V
V_CE = 300V
I_C = 100A
T_J = 150°C, R_G = 5Ω ⁷, V_GE =
15V, L = 100µH,V_CE = 600V
600
V_CC = 480V, V_GE = 15V,
T_J = 125°C, R_G = 5Ω ⁷
10
Inductive Switching (25°C)
V_CC = 400V
V_GE = 15V
I_C = 100A
R_G = 5Ω ⁷
T_J = +25°C
Inductive Switching (125°C)
V_CC =400V
V_GE = 15V
I_C = 100A
R_G = 5Ω ⁷
T_J = +125°C
TYP
14100
4610
4000
8.2
1180
85
660
MAX
55
20
1050
50
TBD
1720
2810
55
20
1150
60
TBD
1955
2865
UNIT
pF
V
nC
A
µs
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJC
V_Isolation
Junction to Case (IGBT)
Junction to Case (DIODE)
RMS Voltage (50-60Hz Sinusoidal Wavefom from Terminals to Mounting Base for 1 Min.)
2500
W_T
Package Weight
1.03
29.2
.22
N/A
°C/W
Volts
oz
gm
Torque Maximum Terminal & Mounting Torque
10
Ib•in
1.1 N•m
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I_CES includes both IGBT and FRED leackage.
3 See MIL-STD-750 Method 3471.
4 E_on1 is the clamped inductive tun-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24)
5 E_on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22)
6 E_off is the clamped induvtive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23)
7 R_G is external gate resistance, not including R_Gint nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.