APT50M75JLLU2 Datasheet, PDF (5/6 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

APT50M75JLLU2
100
1600
T_J = 100°C
V_R = 350V
80
1200
T_J = 150°C
60
T_J = 100°C
60A
800
40
T_J = 25°C
30A
T_J = -55°C
20
AL ₀
IC ⁰
0.5
1.0
1.5
2.0
2.5
V_F, ANODE-TO-CATHODE VOLTAGE (VOLTS)
N _{Figure 15, Forward Voltage Drop vs Forward Current}
H ₄₀
C T_J = 100°C
E ^{N VR=350V}
T _{IO 30}
60A
NCE _{MAT 20}
VA ^{R 30A}
15A
AD _INFO ¹⁰
400
15A
0
10
50 100
500 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 16, Reverse Recovery Charge vs Current Slew Rate
2.0
1.6
1.2
t_rr
0.8
I_RRM
0.4
Q_rr
t_rr
Q_rr
00
200 400 600 800 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 17, Reverse Recovery Current vs Current Slew Rate
200
T_J = 100°C
V_R = 350V
160
60A
120
30A
15A
80
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 18, Dynamic Parameters vs Junction Temperature
2500
25
T_J = 100°C
V_R = 350V
I_F = 30A
2000
20
1500
V_fr
15
1000
10
40
0
0
200 400 600 800 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 19, Reverse Recovery Time vs Current Slew Rate
800
500
500
5
t_fr
0
0
0
200 400 600 800 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 20, Forward Recovery Voltage/Time vs Current Slew Rate
100
50
30
0.01
0.05 0.1
0.5
1
5
10
V_R, REVERSE VOLTAGE (VOLTS)
Figure 21, Junction Capacitance vs Reverse Voltage
50
100 200